|
Product Details:
|
| Material: | Silicon | Operating Temperature: | -65 To +175℃ |
|---|---|---|---|
| Max. Reverse Voltage: | 1000V | Max. Forward Current: | 1.5A |
| Package: | DO-15 | Max. Forward Voltage: | 1V |
| High Light: | 1.5A 1000V General Purpose Rectifier Diode,1n5399 rectifier diode,1n5393 diode |
||
Product Drawing
| SYMBOLS |
1N
5391
|
1N
5392
|
1N
5393
|
1N
5394
|
1N
5395
|
1N
5396
|
1N
5397
|
1N
5398
|
1N
5399
|
UNITS | |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 210 | 280 | 350 | 420 | 560 | 700 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
3.0 |
Amps
|
||||||||
|
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
150 |
Amps
|
||||||||
|
Maximum instantaneous forward voltage at 3.0A
|
VF
|
1.0 | VOLTS | ||||||||
|
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100℃
|
IR
|
5.0 100 |
µA
|
||||||||
|
Typical junction capacitance (NOTE 1)
|
CJ
|
30.0 |
pF
|
||||||||
|
Typical thermal resistance (NOTE 2)
|
RθJA
|
20.0 | ℃/W | ||||||||
|
Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +175 | ℃ | ||||||||
Characteristic Curves
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
