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Product Details:
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| Material: | Silicon | Package: | DO-27 |
|---|---|---|---|
| Operating Temperature: | -65 To +175℃ | Max. Reverse Voltage: | 1000V |
| Max. Forward Current: | 3A | Max. Forward Voltage: | 1V |
| High Light: | 3a Rectifier Diode,1N5406 rectifier diode,1n5408 Rectifier Diode |
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Silicon Standard Rectifier Diode 3A 600V 800V 1000V 1N5405 1N5406 1N5407 1N5408
Product Drawing
|
SYMBOLS
|
1N
5400
|
1N
5401
|
1N
5402
|
1N
5403
|
1N
5404
|
1N
5405
|
1N
5406
|
1N
5407
|
1N
5408
|
UNITS
|
|
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 210 | 280 | 350 | 420 | 560 | 700 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
3.0 |
Amps
|
||||||||
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Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
150 |
Amps
|
||||||||
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Maximum instantaneous forward voltage at 3.0A
|
VF
|
1.0 | VOLTS | ||||||||
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Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100℃
|
IR
|
5.0 100 |
µA
|
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Typical junction capacitance (NOTE 1)
|
CJ
|
30.0 |
pF
|
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Typical thermal resistance (NOTE 2)
|
RθJA
|
20.0 | ℃/W | ||||||||
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Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +175 |
℃ | ||||||||
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
