|
Product Details:
|
| Material: | Silicon | Package: | R-6 |
|---|---|---|---|
| Max. Forward Voltage: | 1V | Max. Forward Current: | 10A |
| Operating Temperature: | -65 To +175℃ | Max. Reverse Voltage: | 1000V |
| High Light: | 10a10 rectifier diode,10 Amp Rectifier Diode,10a10 diode |
||
| SYMBOLS |
10A05
|
10A1
|
10A2
|
10A4
|
10A6
|
10A8
|
10A10
|
UNITS | |
|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 300 | 400 | 500 | 600 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 210 | 280 | 350 | 420 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 300 | 400 | 500 | 600 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
10.0 |
Amps
|
||||||
|
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
500 |
Amps
|
||||||
|
Maximum instantaneous forward voltage at 3.0A
|
VF
|
1.0 | VOLTS | ||||||
|
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100℃
|
IR
|
10.0 100 |
µA
|
||||||
|
Typical junction capacitance (NOTE 1)
|
CJ
|
150.0 |
pF
|
||||||
|
Typical thermal resistance (NOTE 2)
|
RθJA
|
10.0 | ℃/W | ||||||
|
Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +175 | ℃ | ||||||
Product Drawing
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
