Product Details:
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Material: | Silicon | Package: | DO-41 |
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Trr: | 50ns | Max. Forward Voltage: | 1.25V |
Max. Forward Current: | 1A | Max. Reverse Voltage: | 600V |
High Light: | mur160 diode 1a 400v,MUR120 diode 1a 200v,MUR160 diode 1a 600v |
SYMBOLS | MUR 105 | MUR 110 | MUR 120 | MUR 140 | MUR 160 | MUR 180 | MUR 1100 | UNITS | |
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Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VOLTS |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | VOLTS |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VOLTS |
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃ | I(AV) | 1.0 | Amps | ||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 30 | Amps | ||||||
Maximum instantaneous forward voltage at 6.0A | VF | 0.95 | 1.25 | 1.65 | Volts | ||||
Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃10 | IR | 5.0 50.0 | µA | ||||||
Maximum reverse recovery time (NOTE 1) | trr | 25 | 50 | 75 | ns | ||||
Typical junction capacitance (NOTE 2) | CJ | 25.0 | pF | ||||||
Typical thermal resistance (NOTE 3) | RθJA | 50.0 | ℃/W | ||||||
Operating junction and storage temperature range | TJ,TSTG | -55 to +150 | ℃ |
Product Drawing
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398