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Product Details:
|
| Type: | Ultra Fast Recovery Rectifier Diode | Material: | Silicon |
|---|---|---|---|
| Package: | DO-27（DO-201AD） | Trr: | 50ns |
| Max. Forward Voltage: | 1.3V | Max. Forward Current: | 4A |
| Max. Reverse Voltage: | 600V | Packing: | Tape & Box（T/B） |
| High Light: | MUR460G GPP Diode,fast recovery rectifier diode 600v,4A 600V MUR460G Diode |
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Product Drawing
| SYMBOLS |
MUR
405
|
MUR
410
|
MUR
420
|
MUR
440
|
MUR
460
|
MUR
480
|
MUR
4100
|
UNITS | |
|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 400 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 280 | 420 | 560 | 700 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 400 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
4.0 |
Amps
|
||||||
|
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
125 |
Amps
|
||||||
|
Maximum instantaneous forward voltage at 6.0A
|
VF | 0.89 | 1.3 | 1.7 |
Volts
|
||||
|
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃10
|
IR
|
5.0 50.0 |
µA | ||||||
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Maximum reverse recovery time (NOTE 1)
|
trr
|
25 | 50 | 75 | ns | ||||
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Typical junction capacitance (NOTE 2)
|
CJ
|
65.0 | pF | ||||||
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Typical thermal resistance (NOTE 3)
|
RθJA
|
28.0 | ℃/W | ||||||
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Operating junction and storage temperature range
|
TJ,TSTG
|
-55 to +150
|
℃ | ||||||
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
