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Product Details:
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| Material: | Silicon | Trr: | 500ns |
|---|---|---|---|
| Package: | DO-201AD | Max. Reverse Voltage: | 800V |
| Max. Forward Current: | 3A | Max. Forward Voltage: | 1.3V |
| High Light: | High Voltage Fast Recovery Rectifier Diode,by399 diode,by399 DO 201AD diode |
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| SYMBOLS | BY396 | BY397 | BY398 | BY399 | UNITS | |
|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
100 | 200 | 400 | 800 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
70 | 140 | 280 | 560 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
100 | 200 | 400 | 800 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
3.0 |
Amps
|
|||
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Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
150.0 |
Amps
|
|||
|
Maximum instantaneous forward voltage at 3.0A
|
VF
|
1.3 |
Volts
|
|||
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Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
|
IR
|
10.0 100.0 |
µA
|
|||
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Maximum reverse recovery time (NOTE 1)
|
trr
|
500 | ns | |||
|
Typical junction capacitance (NOTE 2)
|
CJ
|
60.0 | pF | |||
|
Typical thermal resistance (NOTE 3)
|
RθJA
|
20.0 | ℃/W | |||
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Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +150
|
℃ | |||
Product Drawing
Contact Person: selena
