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NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

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NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Large Image :  NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Product Details:
Place of Origin: China
Brand Name: trusTec
Certification: ROHS
Model Number: DB3
Payment & Shipping Terms:
Minimum Order Quantity: 5K PCS
Price: Negotiable (EXW/FOB/CNF)
Packaging Details: 5K PCS per tape & box, 100K PCS per carton.
Delivery Time: 10 work days fresh products
Payment Terms: T/T
Supply Ability: 800KK PCS per month

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Description
VBO: 28-36V VBO Typ: 32V
Package: DO-35 Glass IBO: 100μA
Type: DIAC Package Type: Through Hole
Material: Silicon Power: 150mW
High Light:

bl db3 diode 150mW 32V

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db3 diac trigger diode

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Glass Passivated Diode 150mW 32V

Glass Passivated NPN Bidirectional Trigger Diode Thyristors DIAC DB3 Blue Body Coat
 
DB3
BIDIRECTIONAL TRIGGER DIODE
Breakover Voltage - 32 Volts Power- 150mW
 
NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 0
Product Details
 
Small glass structure ensures high reliability
VBO:28-36V version
Low breakover current
High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
 
MECHANICAL DATA
 
Case: JEDEC DO-35 glass body / A-405 plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
Mounting Position: Any
Weight: DO-35 0.005 ounce, 0.14gram
              A-405 0.008 ounce, 0.23gram
 
MAXIMUM RATINGS AND CHARACTERISTICS
 
 
TEST CONDITION
SYMBOLS
VALUE
UNITS
Min. Typ. Max.
Breakover voltage
C=22nF
VBO
28 32 36
VOLTS
Breakover voltage symmetry
C=22nF
I+VBOI-I-VBOI
-3
  3
VOLTS
Dynamic breakover voltage
(NOTE 1)
I D V ± I
5    
VOLTS
Output voltage
DIAGRAM2
VO
5    
VOLTS
Breakover current
C=22nF
IBO
    100
mA
Rise time
DIAGRAM3
tr
  1.5  
mS
Leakage current
VR=0.5VBO
IB
    10
mA
Power dissipation on printed circuit
TA=65 C
Pd
    150
mW
Repetitive peak on-state current
tp=20ms
f=100Hz
ITRM
    2 A
Thermal Resistances from Junction to ambient
 
RQJA
    400
℃/W
Thermal Resistances from Junction to lead
 
RQJL
    150 ℃/W
Operating junction and storage temperature range
 
TJ,TSTG
    125

 

 
Product Datasheet
Type Breakover Voltage Max. Breakover Voltage Symmetry Max. Peak Breakover Current Max. Dynamic Breakover Voltage  Max. Peak On-state Current Package
V V μA V A
Min. Typ. Max.
DB3 28 32 36 3 100 5 2 DO-35
DB4 35 40 45 3 100 5 2 DO-35
DB6 56 63 70 3 100 5 2 DO-35
DB́8 72 80 88 3 100 5 2 DO-35

 

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 1

 

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 2

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 3

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 4

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 5

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V 6

Contact Details
Changzhou Trustec Company Limited

Contact Person: Ms. Selena Chai

Tel: +86-13961191626

Fax: 86-519-85109398

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