|
Product Details:
|
| Material: | Silicon | Package: | SMA(DO-214AC) |
|---|---|---|---|
| Max. Forward Current: | 1A | Max. Reverse Voltage: | 200V |
| Max. Forward Voltage: | 1V | Max. Reverse Current: | 5uA |
| Trr: | 35ns | Operating Temperature: | -55°C ~ 150°C |
| High Light: | 35ns es1d smd diode,1A 200V super fast rectifier,do 214ac diode |
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Product Dimension
Product Features
| SYMBOLS | ES1A | ES1B | ES1C | ES1D | ES1E | ES1G | ES1J | UNITS | ||
|---|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 150 | 200 | 300 | 400 | 600 |
VOLTS
|
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 105 | 140 | 210 | 280 | 420 |
VOLTS
|
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 150 | 200 | 300 | 400 | 600 |
VOLTS
|
|
|
Maximum average forward rectified current at TL=55 ℃
|
I(AV)
|
1 |
Amps
|
|||||||
|
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
30 |
Amps
|
|||||||
|
Maximum instantaneous forward voltage at 1.0A
|
VF | 0.95 | 1.25 | 1.7 |
Volts
|
|||||
|
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
|
IR
|
5.0 50.0 |
µA | |||||||
|
Maximum reverse recovery time (NOTE 1)
|
trr
|
35 | ns | |||||||
|
Typical junction capacitance (NOTE 2)
|
CJ
|
15 | pF | |||||||
|
Typical thermal resistance (NOTE 3)
|
RθJA
|
60 | ℃/W | |||||||
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Operating junction and storage temperature range
|
TJ,TSTG
|
-55 to +150
|
℃ | |||||||
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
