|
Product Details:
|
Material: | Silicon | Trr: | 50ns |
---|---|---|---|
Package: | DO-27 | Max. Reverse Voltage: | 200V |
Max. Forward Current: | 3A | Max. Forward Voltage: | 1V |
Highlight: | HER303 Diode,Rectifier Diode 3A 200V,HER303 Diode 3A 200V |
SYMBOLS |
HER 301
|
HER
302
|
HER
303
|
HER
304
|
HER
305
|
HER
306
|
HER
307
|
HER
308
|
UNITS | |
---|---|---|---|---|---|---|---|---|---|---|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 |
VOLTS
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 210 | 280 | 420 | 560 | 700 |
VOLTS
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 |
VOLTS
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
3.0 |
Amps
|
|||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
150.0 |
Amps
|
|||||||
Maximum instantaneous forward voltage at 6.0A
|
VF | 1.0 | 1.3 | 1.7 |
Volts
|
|||||
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃10
|
5.0 150 |
µA | ||||||||
Maximum reverse recovery time (NOTE 1)
|
trr
|
50 | 70 | ns | ||||||
Typical junction capacitance (NOTE 2)
|
CJ
|
70.0 | 50.0 | pF | ||||||
Typical thermal resistance (NOTE 3)
|
RθJA
|
20.0 | ℃/W | |||||||
Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +150
|
℃ |
Product Outline
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398