|
Product Details:
|
| Material: | Silicon | Trr: | 500ns |
|---|---|---|---|
| Package: | DO-27 | Max. Reverse Voltage: | 1000V |
| Max. Forward Current: | 3A | Max. Forward Voltage: | 1.3V |
| High Light: | 800v Fast Recovery Diode 3A FR302,800v FR304 Diode,800v FR302 Diode |
||
Product Drawing
| SYMBOLS |
FR
301
|
FR
302
|
FR
303
|
FR
304
|
FR
305
|
FR
306
|
FR
307
|
UNITS | |
|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 400 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 280 | 420 | 560 | 700 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 400 | 600 | 800 | 1000 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
3.0 |
Amps
|
||||||
|
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
150.0 |
Amps
|
||||||
|
Maximum instantaneous forward voltage at 6.0A
|
VF
|
1.3 |
Volts
|
||||||
|
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃10
|
5.0 100 |
µA
|
|||||||
|
Maximum reverse recovery time (NOTE 1)
|
trr
|
150 | 250 | 500 | ns | ||||
|
Typical junction capacitance (NOTE 2)
|
CJ
|
60.0 | pF | ||||||
|
Typical thermal resistance (NOTE 3)
|
RθJA
|
40.0 | ℃/W | ||||||
|
Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +150
|
℃ | ||||||
Characteristic Curves
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
