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Product Details:
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| Material: | Silicon | Trr: | 300ns |
|---|---|---|---|
| Max. Reverse Voltage: | 1000V | Max. Forward Current: | 1A |
| Max. Forward Voltage: | 1.3V | Package: | DO-41 |
| High Light: | 1A 1000V FRD Diode,FRD BA157 Diode,0.7mm BA159 Diode |
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| SYMBOLS | BA157S | BA158S | BA159S | ||
|---|---|---|---|---|---|
BA157 | BA15S | BA159 | UNITS | ||
Maximum repetitive peak reverse voltage | VRRM | 400 | 600 | 1000 | VOLTS |
Maximum RMS voltage | VRMS | 280 | 420 | 700 | VOLTS |
Maximum DC blocking voltage | VDC | 400 | 600 | 1000 | VOLTS |
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃ | I(AV) | 1.0 | Amps | ||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 30.0 | Amps | ||
Maximum instantaneous forward voltage at 6.0A | VF | 1.3 | Volts | ||
Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃10 | 5.0 50 |
µA | |||
Maximum reverse recovery time (NOTE 1) | trr | 150 | 250 | 500 | ns |
Typical junction capacitance (NOTE 2) | CJ | 15.0 | pF | ||
Typical thermal resistance (NOTE 3) | RθJA | 50.0 | ℃/W | ||
Operating junction and storage temperature range | TJ,TSTG | -65 to +150 | ℃ | ||
Product Drawing
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
