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Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

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Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal
Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

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Product Details:
Place of Origin: China
Brand Name: trusTec
Certification: ROHS
Model Number: DB3
Payment & Shipping Terms:
Minimum Order Quantity: 5K PCS
Price: Negotiable (EXW/FOB/CNF)
Packaging Details: 5K PCS per tape & box, 100K PCS per carton.
Delivery Time: 10 work days fresh products
Payment Terms: T/T
Supply Ability: 800KK PCS per month

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Description
VBO: 28-36V VBO Typ: 32V
Package: DO-35 Glass IBO: 100μA
Type: DIAC Package Type: Through Hole
Material: Silicon Power: 150mW
High Light:

db3 diac Bi directional Trigger Diode

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Db3 Diac DO35 Glass Package 150mW

DO-35 Glass Package Silicon 150mW Signal Bi-directional Trigger Diode DIAC DB3
 
DB6
BIDIRECTIONAL TRIGGER DIODE
Breakover Voltage - 63 Volts Power- 150mW
 
Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal 0
Product Details
 
Small glass structure ensures high reliability
VBO:56-70V version
Low breakover current
High temperature soldering guaranteed
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
 
MECHANICAL DATA
 
Case: JEDEC DO-35 glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:0.005 ounce, 0.14gram
 
MAXIMUM RATINGS AND CHARACTERISTICS
 
 
TEST CONDITION
SYMBOLS
VALUE
UNITS
Min. Typ. Max.
Breakover voltage
C=22nF
VBO
56 63 70
VOLTS
Breakover voltage symmetry
C=22nF
I+VBOI-I-VBOI
-3
  3
VOLTS
Dynamic breakover voltage
(NOTE 1)
I D V ± I
5    
VOLTS
Output voltage
DIAGRAM2
VO
5    
VOLTS
Breakover current
C=22nF
IBO
    100
mA
Rise time
DIAGRAM3
tr
  1.5  
mS
Leakage current
VR=0.5VBO
IB
    10
mA
Power dissipation on printed circuit
TA=65 C
Pd
    150
mW
Repetitive peak on-state current
tp=20ms
f=100Hz
ITRM
    2 A
Thermal Resistances from Junction to ambient
 
RQJA
    400
℃/W
Thermal Resistances from Junction to lead
 
RQJL
    150 ℃/W
Operating junction and storage temperature range
 
TJ,TSTG
-40   125

 

 
Product Datasheet
Type Breakover Voltage Max. Breakover Voltage Symmetry Max. Peak Breakover Current Max. Dynamic Breakover Voltage  Max. Peak On-state Current Package
V V μA V A
Min. Typ. Max.
DB3 28 32 36 3 100 5 2 DO-35
DB4 35 40 45 3 100 5 2 DO-35
DB6 56 63 70 3 100 5 2 DO-35
DB́8 72 80 88 3 100 5 2 DO-35

 

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal 1

 

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Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal 3

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal 4

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal 5

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal 6

Contact Details
Changzhou Trustec Company Limited

Contact Person: Ms. Selena Chai

Tel: +86-13961191626

Fax: 86-519-85109398

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