|
Product Details:
|
| VBO: | 28-36V | VBO Typ: | 32V |
|---|---|---|---|
| Package: | DO-35 Glass | IBO: | 100μA |
| Type: | DIAC | Package Type: | Through Hole |
| Material: | Silicon | Power: | 150mW |
| High Light: | Diac Db3 Trigger Diode,Db3 Trigger Diode 150mW 32V,Db3 diac trigger |
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TEST CONDITION
|
SYMBOLS
|
VALUE
|
UNITS
|
|||
| Min. | Typ. | Max. | ||||
|
Breakover voltage
|
C=22nF
|
VBO
|
28 | 32 | 36 |
VOLTS
|
|
Breakover voltage symmetry
|
C=22nF
|
I+VBOI-I-VBOI
|
-3
|
3 |
VOLTS
|
|
|
Dynamic breakover voltage
|
(NOTE 1)
|
I D V ± I
|
5 |
VOLTS
|
||
|
Output voltage
|
DIAGRAM2
|
VO
|
5 |
VOLTS
|
||
|
Breakover current
|
C=22nF
|
IBO
|
100 |
mA
|
||
|
Rise time
|
DIAGRAM3 |
tr
|
1.5 |
mS
|
||
|
Leakage current
|
VR=0.5VBO
|
IB
|
10 |
mA
|
||
|
Power dissipation on printed circuit
|
TA=65 C
|
Pd
|
150 |
mW
|
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|
Repetitive peak on-state current
|
tp=20ms
f=100Hz
|
ITRM
|
2 | A | ||
|
Thermal Resistances from Junction to ambient
|
RQJA
|
400 |
℃/W
|
|||
|
Thermal Resistances from Junction to lead
|
RQJL
|
150 | ℃/W | |||
|
Operating junction and storage temperature range
|
TJ,TSTG
|
125 | ℃ | |||
| Type | Breakover Voltage | Max. Breakover Voltage Symmetry | Max. Peak Breakover Current | Max. Dynamic Breakover Voltage | Max. Peak On-state Current | Package | ||
| V | V | μA | V | A | ||||
| Min. | Typ. | Max. | ||||||
| DB3 | 28 | 32 | 36 | 3 | 100 | 5 | 2 | DO-35 |
| DB4 | 35 | 40 | 45 | 3 | 100 | 5 | 2 | DO-35 |
| DB6 | 56 | 63 | 70 | 3 | 100 | 5 | 2 | DO-35 |
| DB́8 | 72 | 80 | 88 | 3 | 100 | 5 | 2 | DO-35 |
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
