|
Product Details:
|
| Material: | Silicon | Package: | DO-41 |
|---|---|---|---|
| Operating Temperature: | -65 To +175℃ | Max. Forward Current: | 1A |
| Max. Reverse Voltage: | 1000V | Max. Forward Voltage: | 1V |
| High Light: | 1n4007 Smd,diode rectifier 1000v 1a,in4007 rectifier diode |
||
1000V Plastic Silicon Standard Rectifier Diode 1N4007 IN4007 5K PCS Tape Ammo Packing
Product Drawing
| SYMBOLS |
1N
4001
|
1N
4002
|
1N
4003
|
1N
4004
|
1N
4005
|
1N
4006
|
1N
4007
|
UNITS | |
|---|---|---|---|---|---|---|---|---|---|
|
Maximum repetitive peak reverse voltage
|
VRRM
|
50 | 100 | 200 | 300 | 400 | 500 | 600 |
VOLTS
|
|
Maximum RMS voltage
|
VRMS
|
35 | 70 | 140 | 210 | 280 | 350 | 420 |
VOLTS
|
|
Maximum DC blocking voltage
|
VDC
|
50 | 100 | 200 | 300 | 400 | 500 | 600 |
VOLTS
|
|
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
|
I(AV)
|
1.0 |
Amps
|
||||||
|
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
|
IFSM
|
30 |
Amps
|
||||||
|
Maximum instantaneous forward voltage at 3.0A
|
VF
|
1.0 | VOLTS | ||||||
|
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
|
IR
|
5.0 100 |
µA
|
||||||
|
Typical junction capacitance (NOTE 1)
|
CJ
|
15.0 |
pF
|
||||||
|
Typical thermal resistance (NOTE 2)
|
RθJA
|
50.0 | ℃/W | ||||||
|
Operating junction and storage temperature range
|
TJ,TSTG
|
-65 to +175 | ℃ | ||||||
Characteristic Curves
Contact Person: Ms. Selena Chai
Tel: +86-13961191626
Fax: 86-519-85109398
